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所属单位：理学院

发表刊物：PHYSICS LETTERS A

关键字：Valley Hall effect Valley Nernst effect Pure transverse valley current

摘要：We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene Junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current Is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current It is expected these features may be helpful in the design of the controllable valleytronic devices. (C) 2018 Elsevier B.V. All rights reserved.

ISSN号：0375-9601

是否译文：否

发表时间：2018-04-05

合写作者：Yao, Jian-ming

通讯作者：牛志平