Electrochemical polishing of monocrystalline silicon with specific crystallographic planes

Affiliation of Author(s):机电学院

Journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Key Words:Monocrystalline silicon Electrochemical polishing Influence factor Polishing characteristic

Abstract:In this study, an electrolytic polishing experimental system was developed to obtain a uniform, flat-surfaced monocrystalline silicon with specific crystallographic planes. Several key factors reflecting specific electrolytic polishing on monocrystalline silicon with specific crystallographic planes were summarized. These factors, including electrolyte, conduction mode, Schottky barrier, semiconductor body resistance, and unidirectional conductivity, were analyzed comprehensively through energy spectrum analysis, theoretical modeling, and potential simulation. The effects of electrolytic polishing process were obtained, and corresponding solutions were proposed. Finally, the electrolytic polishing experiment for monocrystalline silicon with specific crystallographic planes was conducted. A uniform, fiat-surfaced monocrystalline silicon with no metamorphic layer was then obtained. The flatness error of the center area was less than 0.201 mu m. Furthermore, the crystallographic planes of monocrystalline silicon wafers showed no change.

ISSN No.:1369-8001

Translation or Not:no

Date of Publication:2017-08-15

Co-author:陈浩然,Lida Shen,Qiu Mingbo,tzj,葛梦醒

Correspondence Author:lzd

Date of Publication:2017-08-15