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所属单位：材料科学与技术学院

发表刊物：APPLIED SURFACE SCIENCE

关键字：Magnetron sputtering Y2O3 Energy per arriving atom Intrinsic stress

摘要：The influence of the ratio between the energy and the deposition flux, or the energy per arriving atom, on the growth of Y2O3 sputter deposited thin films has been studied. The energy per arriving atom has been varied by the adjustment of the discharge power, and/or the target-to-substrate distance. The relationship between the energy per arriving atom and the phase evolution, grain size, microstructure, packing density and residual stress was investigated in detail. At low energy per arriving atom, the films consist of the monoclinic B phase with a preferential (111) orientation. A minority cubic C phase appears at higher energy per arriving atom. A study of the thin film cross sections showed for all films straight columns throughout the thickness, typically for a zone II microstructure. The intrinsic stress is compressive, and increases with increasing energy per atom. The same trend is observed for the film density. Simulations show that the momentum transfer per arriving atom also scales with the energy per arriving atom. Hence, the interpretation of the observed trends as a function of the energy per arriving atom must be treated with care. (C) 2018 Elsevier B.V. All rights reserved.

ISSN号：0169-4332

是否译文：否

发表时间：2018-05-01

合写作者：Xia, Jinjiao,Miao, Qiang,Depla, Diederik

通讯作者：Depla, Diederik,梁文萍