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    赫崇君

    • 副教授
    • 招生学科专业:
      光学工程 -- 【招收硕士研究生】 -- 航天学院
      电子信息 -- 【招收硕士研究生】 -- 航天学院
    • 学历:哈尔滨工业大学
    • 学位:理学博士学位
    • 所在单位:航天学院
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    High thermal stability of piezoelectric properties in tetragonal Pb(In1/3Nb2/3)O-3-PbTiO3 single crystal

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    所属单位:航天学院

    发表刊物:JOURNAL OF APPLIED PHYSICS

    关键字:TEMPERATURE GROWTH EVOLUTION

    摘要:The representatives of relaxor ferroelectric (1-x)Pb(Zn1/3Nb2/3)O-3-xPbTiO(3) (PZNT) and (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMNT) have been extensively studied due to their excellent dielectric and piezoelectric properties near the morphotropic phase boundary (MPB). However, low rhombohedral to tetragonal phase transition temperature and Curie temperature directly affect the performance and stability of devices, particularly for high-power ultrasonic transducers. In this paper, the large size tetragonal 0.62Pb(In1/2Nb1/2)O-3-0.38PbTiO(3) (PINT) crystal was grown by the modified Bridgman technique. The crystals were oriented along the < 100 > direction to make bars with electrodes on (001) faces. The variation of the dielectric constant with temperature showed that the Curie temperature of PINT was 250 degrees C, and the maximum dielectric constant was 7.29x10(4) epsilon(0). Fitting with Curie-Weiss's law, we obtained that the relaxation degree was 1.44, which could mean that the dielectric properties of PINT are between relaxor ferroelectric and ordinary ferroelectric. At room temperature, electromechanical coupling coefficient k(31) and piezoelectric strain constant d(31) were 0.56 and 551 pC/N, respectively. Piezoelectric properties were relatively stable between room temperature and 175 degrees C. The material has good temperature stability in terms of piezoelectricity and dielectric properties. These results proved that the working temperature of the PINT crystal could reach about 175 degrees C, much higher than PZNT and PMNT single crystal, indicating their application in ultrasonic transducers at high temperatures. Published under license by AIP Publishing.

    ISSN号:0021-8979

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    发表时间:2019-08-28

    合写作者:Deng, Chenguang,Chen, Ziyun,Chen, Hongbing,Mao, Rong,刘友文,朱孔军,Gao, Huifang,Ding, Ye

    通讯作者:赫崇君