Affiliation of Author(s):自动化学院
Journal:2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
Key Words:health monitoring saturatino resistance transistor degradation power MOSFETs magnitude-frequency gain fast Fourier transform (FFT)
Abstract:A health monitoring method using the saturation region resistance is proposed in this paper to identify the level of aging associated with power semiconductor switches inside a Boost converter. Power MOSFETs are one of the most age affected components in power electronic converters, and the on resistance has been proved to be the most significant aging factor in power MOSFETs. However, the small value of the on resistance makes it difficult to identify. To solve this problem, the saturation-region resistance is used as the failure precursor parameter for MOSFET health monitoring and the magnitude frequency gain at low gate drive voltage is used to identify the aging status of MOSFETs. The shift of the saturation-region resistance caused by degradation is demonstrated by power cycle tests in this paper. The proposed method can be implemented by fast Fourier transform (FFT) and no extra measuring point is added. Simulation results are given to verify the effectiveness of the proposed method.
ISSN No.:2329-3721
Translation or Not:no
Date of Publication:2017-01-01
Co-author:Ren, Lei,Chen Xin
Correspondence Author:Ren, Lei,gcy
Date of Publication:2017-01-01