中文
Home > Scientific Research > Paper Publications

Transient transition from free carrier metallic state to exciton insulating state in GaAs by ultrafast photoexcitation

Hits:

  • Affiliation of Author(s):Beijing University of Technology

  • Journal:New J. Phys.

  • Place of Publication:England

  • Indexed by:Journal paper

  • Document Type:J

  • Volume:20

  • Page Number:033015

  • Translation or Not:no

  • Date of Publication:2018-03-26

  • Included Journals:SSCI

  • Date of Publication:2018-03-26

    • Attachments:

  • 1. New J. Phys. 20, 033015 (2018).pdf  Download[]Times
Copyright©2018- Nanjing University of Aeronautics and Astronautics·Informationization Department(Informationization Technology Center) Click:
  MOBILE Version

The Last Update Time:..